Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires
2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 16, 163106-1-163106-4 p.Article in journal (Refereed) Published
Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2012. Vol. 101, no 16, 163106-1-163106-4 p.
crystal defects, electron-hole recombination, gallium compounds, III-V semiconductors, magnetic resonance, molecular beam epitaxial growth, nanowires, photoluminescence, semiconductor growth, semiconductor quantum wires, silicon, time resolved spectra, wide band gap semiconductors
National CategoryCondensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-85469DOI: 10.1063/1.4760273ISI: 000310669300057OAI: oai:DiVA.org:liu-85469DiVA: diva2:570640