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Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
Department of Physics, University of California, La Jolla, California, USA.
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2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 16, 163106-1-163106-4 p.Article in journal (Refereed) Published
Abstract [en]

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2012. Vol. 101, no 16, 163106-1-163106-4 p.
Keyword [en]
crystal defects, electron-hole recombination, gallium compounds, III-V semiconductors, magnetic resonance, molecular beam epitaxial growth, nanowires, photoluminescence, semiconductor growth, semiconductor quantum wires, silicon, time resolved spectra, wide band gap semiconductors
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-85469DOI: 10.1063/1.4760273ISI: 000310669300057OAI: oai:DiVA.org:liu-85469DiVA: diva2:570640
Available from: 2012-11-20 Created: 2012-11-20 Last updated: 2017-12-07

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Stehr, Jan EricChen, ShulaChen, WeiminBuyanova, Irina

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