Poly(3.4-ethylene dioxythiophene)- and polyaniliane-Poly(perfluoroethylenesulfonic acid) as hole injecting layers in polymer light emitting devices
(English)Manuscript (preprint) (Other academic)
We present a study of poly(3,4-ethylene dioxythiophene), PEDOT, and polyaniline, where poly(perfluoroethylenesulfonic acid), PFESA has been used as counter ion and dopant respectively. The study was done in order to establish how the material petfonns as hole injecting layers in polymer light emitting devices. A total of 19 different PEDOT-PFESA samples and three different PAni-PFESA systems were studied, each with a different acidity, ranging between pH 1.6 to pH 7.7. The highest work function obtained was 6.0 eV and work function and acidity correlate such that significantly higher work functions are obtained for higher acidities. Photoelectron spectroscopy and Atomic Force Microscopy data suggest that the resulting fihns have grain structured morphology where the PAni-PFESA and PEDOT-PFESA systems form inverse micelles, i.e. PEDOT or PAni together with counter ions as an inner core surrounded by mainly the PFESA backbone.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-85555OAI: oai:DiVA.org:liu-85555DiVA: diva2:571606