Effect of impurities on the lattice parameters of InN
(English)Manuscript (preprint) (Other academic)
We study the effect of the most common impurities and dopants on the lattice parameters of InN by using ab-initio calculations. We have considered both the size and deformation potential effect and report results for H, O, Si andMg. The incorporation of H on interstitial site and substitutional O leads to expansion of the lattice. On the other hand, incorporation of Si or Mg leads to contraction of the lattice. The most pronounced effect is observed for Si. Our results indicate that the increase of the in-plane lattice parameter of Mg doped InN cannot be explained neither by the size nor by the deformation potential effect and suggest that the growth strain is changed in this case.a)Electronic mail: firstname.lastname@example.org.
IdentifiersURN: urn:nbn:se:liu:diva-85566OAI: oai:DiVA.org:liu-85566DiVA: diva2:571703