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SiC-FET methanol sensors for process control and leakage detection
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Dept. of Electronics and Telecommunication Engineering, Bengal Engineering and Science University, India.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
IC Design & Fabrication Centre, Dept. of Electronics & Telecommunications Engineering, Jadavpur University, Kolkata, India.
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2013 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 187, no SI, 553-562 p.Article in journal (Refereed) Published
Abstract [en]

Two types of SiC based field effect transistor sensors, with Pt or Ir gate, were tested to detect methanol in the concentration range of 0–1600 ppm for both process control and leak detection applications. The methanol response was investigated both with and without oxygen, since the process control might be considered as oxygen free application, while the sensor is operated in air during leak detection. Pt sensors offered very fast response with appreciably high response magnitude at 200 °C, while Ir sensors showed both higher response and response time up to 300 °C, but this decreased considerably at 350 °C. Cross sensitivity effect in presence of oxygen, hydrogen, propene and water vapor was also investigated. The presence of oxygen improved the response of both sensors, which is favorable for the leak detection application. Hydrogen had a large influence on the methanol response of both sensors, propene had a negligible influence, while water vapor changed direction of the methanol response for the Pt sensor. The detection mechanism and different sensing behavior of Pt and Ir gate sensors were discussed in the light of model reaction mechanisms derived from hybrid density-functional theory quantum-chemical calculations.

Place, publisher, year, edition, pages
2013. Vol. 187, no SI, 553-562 p.
Keyword [en]
SiC-FET sensor, methanol, quantum-chemical calculation, Pt, Ir, gas sensor
National Category
Engineering and Technology Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-85636DOI: 10.1016/j.snb.2013.04.019ISI: 000324298300081OAI: oai:DiVA.org:liu-85636DiVA: diva2:572085
Available from: 2012-11-26 Created: 2012-11-26 Last updated: 2017-12-07Bibliographically approved
In thesis
1. SiCFET gassensors: theory, developent, and applications to flue gas cleaning processes  in power plants
Open this publication in new window or tab >>SiCFET gassensors: theory, developent, and applications to flue gas cleaning processes  in power plants
2012 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Environmental and health concerns lead to stricter regulations on power plant emission. Sensors play an important role, not only as part of the process control to ensure that the effluent stays under the regulated values, but also to increase the pollution removal efficiency and to decrease the reagent consumption.

Previous studies, on the use of SiC based Field Effect Transistors (FET) as NH3 sensors in Tekniska Verken power plants and as CO sensors for the control of the domestic boilers, have shown promising results. Moreover, these sensors can withstand high temperature operation and are considerably cheaper than most conventional sensors used in power plants. The price of the sensors enable the installation of multiple sensors in one flue gas duct section, which lead to better monitoring of the flue gas uniformity. Based on that argument, this study is performed to determine whether it is possible to expand the possible application of SiC-FET sensors for the detection of other pollutants emitted by power plants. This thesis reports the characterization and performance testing of SiC-FET sensors towards other selected air pollutants: H2S, methanol as a product of CO2 hydrogenation, and SO2.

The study is performed by I-V characterization of the sensors toward the test gas in different background gases and studies of the detection mechanism. Detection mechanism studies include DRIFT spectroscopy, mass spectroscopy, and theoretical study of the surface reaction with Density Functional Theory (DFT).

Ir-gate SiC-FET sensors at 350oC show a very high sensitivity to H2S. The large response reduces the possibility of cross-sensitivity from other gases. Pt-gate sensors offer very fast response with decent response magnitude at 200oC for methanol. The presence of oxygen improves the response to methanol, which is favorable for the leak detection application. Besides oxygen, the influence of hydrogen, propene, and water vapor is also observed in the experiment with methanol. The detection mechanism and different  sensing behavior of Pt and Ir gates are illustrated with model reaction mechanisms on the surface of the metals. Sensor characterization has been performed for SO2 with several catalytic metal gates: Pt, Ir, Cu, and Au. The results suggest that a single sensor with any of Pt, Ir, Cu, and Au gates is able to detect the presence of SO2 in the air or nitrogen background. However, they are unable to measure different SO2 concentration. Moreover, the response level to SO2 is so small, that it will probably disappear if there is any other gas present in the mixture.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2012. 32 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1554
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-85637 (URN)LIU-TEK-LIC-2012:39 (Local ID)978-91-7519-764-7 (ISBN)LIU-TEK-LIC-2012:39 (Archive number)LIU-TEK-LIC-2012:39 (OAI)
Presentation
2012-11-30, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (English)
Opponent
Supervisors
Available from: 2012-11-26 Created: 2012-11-26 Last updated: 2015-03-09Bibliographically approved

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Darmastuti, ZhafiraAndersson, MikeKäll, Per-OlovOjamäe, LarsLloyd Spetz, Anita

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