Free-standing HVPE-GaN Layers
2003 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 0, no 7, 1985-1988 p.Article in journal (Refereed) Published
We have grown GaN layers with a thickness up to 340 μm in an rf-heated vertical HVPE reactor with a bottom-fed design. The GaN layers were separated from the sapphire substrate by a LLO process. The free-standing GaN was investigated by HRXRD, AFM and low temperature CL. The FWHM values of the ω-scans are 96 and 129 arcsec for the (104) and (002) reflection, respectively, which indicates high crystalline quality. The c and a lattice parameters are determined as c = 0.51850 ± 0.00004 nm and a = 0.31890 ± 0.00004 nm, indicating stress free material. The etch pit density was estimated to be 1 × 107 cm−2. The used HVPE growth procedure together with the subsequent LLO are obviously capable to provide high-quality free-standing GaN material for further epitaxial overgrowth.
Place, publisher, year, edition, pages
2003. Vol. 0, no 7, 1985-1988 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-85826DOI: 10.1002/pssc.200303333OAI: oai:DiVA.org:liu-85826DiVA: diva2:572960