Incorporation effects of Si in TiCx thin films
2012 (English)Manuscript (preprint) (Other academic)
DC magnetron sputtered Ti-Si-C thin films with varying Si content between 0 to 13 at.% were deposited from elemental targets. The effects on microstructure were investigated using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Results show that the growth of pure TiCx onto Al2O3(0001) at a temperature of 350 °C is epitaxial and understoichiometric with x~0.7. For Si contents up to 5 at.%, the Si is incorporated into the TiCx with retained epitaxy. For Si contents above 5 at.%, the Si segregate out from the TiCx to the grain boundaries forming, causing a transition from of epitaxial to polycrystalline and nanocomposite growth.
Place, publisher, year, edition, pages
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-85828OAI: oai:DiVA.org:liu-85828DiVA: diva2:572977