Negative-U System of Carbon Vacancy in 4H-SiC
2012 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 109, no 18, 187603- p.Article in journal (Refereed) Published
Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V-C) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown 4H-SiC-the Z(1/2) lifetime-limiting defect and the EH7 deep defect-are related to the double acceptor (2 - vertical bar 0) and single donor (0 vertical bar +) levels of V-C, respectively.
Place, publisher, year, edition, pages
American Physical Society , 2012. Vol. 109, no 18, 187603- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-85855DOI: 10.1103/PhysRevLett.109.187603ISI: 000310434400038OAI: oai:DiVA.org:liu-85855DiVA: diva2:573277
Funding Agencies|Swedish Energy Agency||Swedish Research Council VR/Linne Environment LiLI-NFM||Knut and Alice Wallenberg Foundation||Norwegian Research Council||JSPS|21226008|2012-11-302012-11-302015-05-12