Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC
2012 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 45, no 45Article in journal (Refereed) Published
Using capacitance transient techniques, a bistable centre, called FB centre here, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (E-a = E-C - 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the transition temperatures to be T-A -andgt; B andgt; 730K and for the opposite process T-B -andgt; A approximate to 710 K. The energy needed to conduct the transformations were determined to be E-A(A -andgt; B) = (2.1 +/- 0.1) eV and E-A(B -andgt; A) = (2.3 +/- 0.1) eV, respectively. The pre-factor indicated an atomic jump process for the opposite transition A -andgt; B and a charge carrier-emission dominated process in the case of B -andgt; A. Minority charge carrier injection enhanced the transformation from configuration B to configuration A by lowering the transition barrier by about 1.4 eV. Since the bistable FB centre is already present after low-energy electron irradiation (200 keV), it is likely related to carbon.
Place, publisher, year, edition, pages
Institute of Physics , 2012. Vol. 45, no 45
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-85846DOI: 10.1088/0022-3727/45/45/455301ISI: 000310453400009OAI: oai:DiVA.org:liu-85846DiVA: diva2:573291
Funding Agencies|Swedish Research Council|2009-338320085243|Swedish Energy Agency|P30942-1|2012-11-302012-11-302015-09-22