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Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7171-5383
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
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2012 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 45, no 45Article in journal (Refereed) Published
Abstract [en]

Using capacitance transient techniques, a bistable centre, called FB centre here, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (E-a = E-C - 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the transition temperatures to be T-A -andgt; B andgt; 730K and for the opposite process T-B -andgt; A approximate to 710 K. The energy needed to conduct the transformations were determined to be E-A(A -andgt; B) = (2.1 +/- 0.1) eV and E-A(B -andgt; A) = (2.3 +/- 0.1) eV, respectively. The pre-factor indicated an atomic jump process for the opposite transition A -andgt; B and a charge carrier-emission dominated process in the case of B -andgt; A. Minority charge carrier injection enhanced the transformation from configuration B to configuration A by lowering the transition barrier by about 1.4 eV. Since the bistable FB centre is already present after low-energy electron irradiation (200 keV), it is likely related to carbon.

Place, publisher, year, edition, pages
Institute of Physics , 2012. Vol. 45, no 45
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-85846DOI: 10.1088/0022-3727/45/45/455301ISI: 000310453400009OAI: oai:DiVA.org:liu-85846DiVA: diva2:573291
Note

Funding Agencies|Swedish Research Council|2009-338320085243|Swedish Energy Agency|P30942-1|

Available from: 2012-11-30 Created: 2012-11-30 Last updated: 2017-12-07

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Beyer, FranziskaHemmingsson, CarlPedersen, HenrikHenry, AnneJanzén, Erik

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