Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy
2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 115, no 3, 034302- p.Article in journal (Refereed) Published
The early stages of InGaN/GaN quantum wells growth for In reduced conditions have been investigated for varying thickness and composition of the wells. The structures were studied by monochromated STEM–VEELS spectrum imaging at high spatial resolution. It is found that beyond a critical well thickness and composition, quantum dots (>20 nm) are formed inside the well. These are buried by compositionally graded InGaN, which is formed as GaN is grown while residual In is incorporated into the growing structure. It is proposed that these dots may act as carrier localization centers inside the quantum wells.
Place, publisher, year, edition, pages
2014. Vol. 115, no 3, 034302- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-85903DOI: 10.1063/1.4861179ISI: 000330615500062OAI: oai:DiVA.org:liu-85903DiVA: diva2:573684
On the day of the defence date the status of this article was Manuscript.2012-12-032012-12-032016-08-31Bibliographically approved