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White light-emitting diode based on fluorescent SiC
Meijo University, Japan .
Meijo University, Japan .
Meijo University, Japan .
Meijo University, Japan .
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2012 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 522, 23-25 p.Article in journal (Refereed) Published
Abstract [en]

A monolithic white light-emitting diode (LED,) comprising a combination of a fluorescent-SiC (f-SiC) substrate and a nitride-based near-UV LED stack, is proposed. On the basis of the recombination of donor and acceptor pairs, the f-SiC substrate works as a phosphor for visible light emission. By employing the Fast Sublimation Growth Process method, the high-quality f-SiC substrate doped with N and B exhibited a nonradiative carrier lifetime of 55 mu s and an internal quantum efficiency (IQE) of 40%. With increasing donor and acceptor doping concentrations, a high IQE was estimated even at a high excitation level.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 522, 23-25 p.
Keyword [en]
LED, SiC, Internal quantum efficiency, Nitride semiconductor
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-86121DOI: 10.1016/j.tsf.2012.02.017ISI: 000310782000007OAI: oai:DiVA.org:liu-86121DiVA: diva2:574966
Available from: 2012-12-07 Created: 2012-12-07 Last updated: 2017-12-07

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Yakimova, RositsaSyväjärvi, Mikael

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