Single InAs/GaAs quantum dot spectroscopy in a lateral electric field
(English)Manuscript (preprint) (Other academic)
We report on the comprehensive study of InAs/GaAs single quantum dots subjected to a lateral external electric field by means of micro-photoluminescence (μ-PL) technique. The results obtained on the exciton in the μ-PL spectra of a single dot demonstrate a considerable PL intensity enhancement (up to a factor of 4) of the dot as well as a redistribution of the excitonic lines when an electric field is applied. The latter fact exhibits an effective charge reconfiguration of the dot from a purely negatively charged to a neutral state. The model proposed to explain the charge redistribution is based on an effective hole localization at the potential fluctuations of the wetting layer at low temperature and bias.
IdentifiersURN: urn:nbn:se:liu:diva-86208OAI: oai:DiVA.org:liu-86208DiVA: diva2:575715