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An operational amplifier for high performance pipelined ADCs in 65nm CMOS
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
2012 (English)Conference paper, Oral presentation with published abstract (Refereed)
Abstract [en]

A CMOS fully differential high gain-bandwidth (GBW) product operational amplifier (OpAmp) is presented in this paper. In order to achieve a high gain, the Nested gain-boosting technique [1] is employed. The design is implemented in a 1.1V standard 65nm CMOS process. The DC-gain of the OpAmp is larger than 77.9dB with the unity-gain frequency of 4.61GHz while achieving 76.2 degrees of phase margin (PM). Applying the maximum input swing, the output signal settles to 0.01% accuracy in less than 3.8ns. The output total harmonic distortion (THD) of the OpAmp is 0.586% for maximum signal swing at the frequencies near Nyquist frequency with the input-referred noise of 5.4nV/√Hz. The high GBW product of this design makes it suitable for 12-bit 200MS/s pipelined ADC applications.

Place, publisher, year, edition, pages
IEEE , 2012. 1-4 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-86336DOI: 10.1109/NORCHP.2012.6403114ISBN: 978-1-4673-2222-5 (print)ISBN: 978-1-4673-2221-8 (print)OAI: oai:DiVA.org:liu-86336DiVA: diva2:576604
Conference
IEEE NORCHIP 2012, 12-13 November 2012, Copenhagen, Denmark
Available from: 2012-12-13 Created: 2012-12-13 Last updated: 2014-11-10

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Ojani, Amin

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CiteExportLink to record
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Citation style
  • apa
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  • Other style
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  • de-DE
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  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
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Output format
  • html
  • text
  • asciidoc
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