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Comparative study on dry etching of alpha- and beta-SiC nano-pillars
Grenoble INP MINATEC, France LTM CNRS, France .
LTM CNRS, France .
Grenoble INP MINATEC, France .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
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2012 (English)In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 87, 9-12 p.Article in journal (Refereed) Published
Abstract [en]

Different polytypes (alpha-SiC and beta-SiC) and crystallographic orientations ((0001) and (11-20) of 6H-SiC) have been used in order to elaborate silicon carbide (SiC) nanopillars using the inductively coupled plasma etching method. The cross section of the SiC pillars shows a rhombus, pentagonal or hexagonal morphology depending on polytypes and crystallographic orientations. The favored morphologies of SiC nanopillars originate from a complex interplay between their polytypes and crystal orientations, which reflects the so-called Wulffs rule.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 87, 9-12 p.
Keyword [en]
Nanopillars, Dry etching, Silicon carbide, Polytypes
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-86375DOI: 10.1016/j.matlet.2012.07.051ISI: 000311004500003OAI: oai:DiVA.org:liu-86375DiVA: diva2:576896
Available from: 2012-12-14 Created: 2012-12-14 Last updated: 2017-12-06

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Henry, Anne

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CiteExportLink to record
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  • apa
  • harvard1
  • ieee
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  • vancouver
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  • Other style
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  • de-DE
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