Atomistic mechanisms leading to adatom insertion into grain boundaries and stress generation in physically vapor deposited films
(English)Manuscript (preprint) (Other academic)
Stress generation in polycrystalline Mo thin films grown using an energetic vapor flux (energies <~120 eV) is investigated. It is found that the film stress ranges from -3 to 0.2 GPa with a nearly constant stress free lattice parameter, slightly larger than the bulk lattice parameter of Mo. This implies that the compressive film stress is not caused by defect creation in the grains but rather by grain boundary densification. This scenario is supported by a correlation between large compressive film stresses and high film densities. Two concurrent energetic bombardment induced mechanisms for diffusion of atoms into grain boundaries and boundary densification are suggested.
IdentifiersURN: urn:nbn:se:liu:diva-86471OAI: oai:DiVA.org:liu-86471DiVA: diva2:577763