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Dielectric function and refractiveindex of GaBixAs1-x(x = 0.035, 0.052, 0.075)
Center for Physical Sciences and Technology, Vilnius, Lithuania.
Center for Physical Sciences and Technology, Vilnius, Lithuania.
Center for Physical Sciences and Technology, Vilnius, Lithuania.
Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, The Institute of Technology.ORCID iD: 0000-0001-9229-2028
2012 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 9, no 7, 1633-1635 p.Article in journal (Refereed) Published
Abstract [en]

MBE grown GaBiAs epitaxial layers with Bi content of3.5 %, 5.2 %, and 7.5 %, sandwiched between GaAs,have been investigated by spectroscopic ellipsometry inthe infrared and absorption threshold spectral regions.The real and imaginary parts of the dielectric function ofGaBiAs indicate bandgap Eg and spin-orbit splitting Δ0+values close to literature data. The refractive index ofGaBiAs in the IR region 0.2–0.8 eV exceeds that ofGaAs by ca. 0.8 %, 2.3 %, and 3.6 %, for Bi content3.5 %, 5.2 %, and 7.5 %, respectively.

Place, publisher, year, edition, pages
Weinheim: Wiley-VCH Verlagsgesellschaft, 2012. Vol. 9, no 7, 1633-1635 p.
Keyword [en]
GaBiAs, spectroscopic ellipsometry, dielectric function
National Category
Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-86512DOI: 10.1002/pssc.201100696OAI: oai:DiVA.org:liu-86512DiVA: diva2:578359
Available from: 2012-12-18 Created: 2012-12-18 Last updated: 2017-12-06

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Arwin, Hans

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