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Potentiometric Zinc Ion Sensor Based on Honeycomb-Like NiO Nanostructures
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
Quaid-e-Azam University Campus, Islamabad, Pakistan.
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2012 (English)In: Sensors, ISSN 1424-8220, Vol. 12, no 11, 15424-15437 p.Article in journal (Refereed) Published
Abstract [en]

In this study honeycomb-like NiO nanostructures were grown on nickel foam by a simple hydrothermal growth method. The NiO nanostructures were characterized by field emission electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) techniques. The characterized NiO nanostructures were uniform, dense and polycrystalline in the crystal phase. In addition to this, the NiO nanostructures were used in the development of a zinc ion sensor electrode by functionalization with the highly selective zinc ion ionophore 12-crown-4. The developed zinc ion sensor electrode has shown a good linear potentiometric response for a wide range of zinc ion concentrations, ranging from 0.001 mM to 100 mM, with sensitivity of 36 mV/decade. The detection limit of the present zinc ion sensor was found to be 0.0005 mM and it also displays a fast response time of less than 10 s. The proposed zinc ion sensor electrode has also shown good reproducibility, repeatability, storage stability and selectivity. The zinc ion sensor based on the functionalized NiO nanostructures was also used as indicator electrode in potentiometric titrations and it has demonstrated an acceptable stoichiometric relationship for the determination of zinc ion in unknown samples. The NiO nanostructures-based zinc ion sensor has potential for analysing zinc ion in various industrial, clinical and other real samples.

Place, publisher, year, edition, pages
MDPI , 2012. Vol. 12, no 11, 15424-15437 p.
Keyword [en]
honeycomb NiO nanostructures, potentiometric response, ion selective electrode, selectivity, selective ionophore
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-86653DOI: 10.3390/s121115424ISI: 000311429500060OAI: diva2:580090
Available from: 2012-12-20 Created: 2012-12-20 Last updated: 2014-01-17
In thesis
1. The synthesis, characterization and device fabrication of ZnO, NiO and their composite nanostructures
Open this publication in new window or tab >>The synthesis, characterization and device fabrication of ZnO, NiO and their composite nanostructures
2014 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Electronics industry has been revolutionized since last few decades because of the fabrication of electronic devices by using nanoscale based materials. But the more innovative feature in the electronic devices is the use of transparent materials, which makes the transparent electronic devices as one of the most interesting research field in nanoscience and nano-technology now a days. In order to have high performance electronic devices based on the wide band gap compound semiconductors, a selection of right transparent material is crucial step. Among all the transparent metal oxides, ZnO is one of the potential candidates due to the ease in the synthesis process, wide bandgap of 3.37 eV, a high exciton binding energy of 60 meV and diverse morphologies. Since p-type ZnO based nanodevices are still difficult to fabricate due to the instability and unreliability of p-type ZnO nanomaterial, therefore several p-type semiconductors are used for the development of p-n junctions. Among those NiO is suitable p-type compound semiconductor to make p-n junction with ZnO because of its wide band gap of 3.7 eV and environment friendly conditions for its synthesis. Keeping these attractive properties of n-type ZnO and p-type NiO, the synthesis of composite nanostructures of these two transparent oxides and fabrication of their electronic devices is presented in this dissertation work.

I started my work with the synthesis of ZnO nanostructures focusing on the effect of different anions of zinc salts on the morphology and crystallinity of ZnO nanostructures. Then I grow honey-comb like NiO nanostructures on 3D nickel foam and used these nanostructures for the detection of Zinc ion. After that synthesized NiO and ZnO based composite nanostructures and characterized them, having main focus on the luminescence properties of ZnO when decorated with NiO nanostructures. The composite nanostructures of p-type NiO and n-type ZnO showed enhancement in the luminescence properties. Since pn junction is the back bone of electronic devices so working on the designing of band alignment along with the current transport properties of p-type NiO/n-type ZnO composite structures, an attempt was put forwarded to explain the phenomenon of these compound semiconducting materials. Different devices based on these two compound semiconducting materials are fabricated and designed in the present dissertation work, however still more work is required to improve the efficiency of devices like LEDs and UV detectors.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2014. 55 p.
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1562
Zinc oxide; Nickel Oxide; Composite nanostructures; Wide band gap; Low temperature growth; Luminescence, Photo-detector; Light emitting diode
National Category
Natural Sciences
urn:nbn:se:liu:diva-103343 (URN)
Public defence
2014-01-24, Kåkenhus, Campus Norrköping, Linköpings universitet, Norrköping, 10:00 (English)
Available from: 2014-01-17 Created: 2014-01-17 Last updated: 2014-09-18Bibliographically approved

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