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Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes
University of Lyon, France .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Lyon, France .
University of Lyon, France .
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2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 22, 222111- p.Article in journal (Refereed) Published
Abstract [en]

PiN diodes have been fabricated on nominally on-axis Si-face 4H-SiC material and their electrical characteristics are compared to PiN diodes processed with exactly the same device process recipe on 8 degrees-off 4H-SiC material. Some diodes had an optical window on the top metal contact to observe the possible stacking faults generation and motion with photo emission microscopy. The diodes were electrically characterized in forward voltage to test their stability. Electrical characterizations demonstrate that there is no noticeable degradation for the diodes processed on on-axis 4H-SiC substrate and with optical characterization the formation of stacking faults was not observed.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2012. Vol. 101, no 22, 222111- p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-86897DOI: 10.1063/1.4768440ISI: 000311967000046OAI: diva2:583030

Funding Agencies|Agence Nationale pour la Recherche, ANR|ANR-08-BLAN-0191|Swedish Energy Agency|32917-1|Swedish Research Council|VR 2009-3383|Swedish Government Strategic Research Area Grant in Material Science||

Available from: 2013-01-07 Created: 2013-01-07 Last updated: 2014-10-08

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ul-Hassan, JawadHenry, AnneJanzén, Erik
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