Intrinsic, n- and p-doped a-Si:H thin films grown by DC magnetron sputtering with doped targets
1999 (English)In: Materials Research Society Symposium Proceedings, ISSN 0272-9172, Vol. 557, 31-36 p.Article in journal (Refereed) Published
Intrinsic, n- and p-type a-Si:H films were deposited by dc magnetron sputtering and analyzed with several techniques. The films were synthesized in a reactive Ar-Ha atmosphere giving H contents in the range of 3-20 at %. The films were sputtered from pure silicon targets and doped silicon targets with 1 at % B or P. Doping by co-sputtering from composite Si/B4C targets was also explored. The doping concentrations were 3 × 1020 - 2 × 1021 cm-3 for the p-type films and 2.6-2.9 × 1019cm-3 for the n-type films. The conductivity was in the range lO'MO"4 cm-1 for p-doped films and 10-5 Cl cm-1 for the best n-doped films. Band gap estimations were obtained from dielectric function data and showed an increase with hydrogen content. A comparison to device quality PECVD-samples was also made.
Place, publisher, year, edition, pages
1999. Vol. 557, 31-36 p.
IdentifiersURN: urn:nbn:se:liu:diva-87064DOI: 10.1557/PROC-557-31OAI: oai:DiVA.org:liu-87064DiVA: diva2:584741