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Intrinsic, n- and p-doped a-Si:H thin films grown by DC magnetron sputtering with doped targets
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-2749-8008
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Dept. of Physics, Royal Institute of Technology, Stockholm, Sweden.
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1999 (English)In: Materials Research Society Symposium Proceedings, ISSN 0272-9172, E-ISSN 1946-4274, Vol. 557, 31-36 p.Article in journal (Refereed) Published
Abstract [en]

Intrinsic, n- and p-type a-Si:H films were deposited by dc magnetron sputtering and analyzed with several techniques. The films were synthesized in a reactive Ar-Ha atmosphere giving H contents in the range of 3-20 at %. The films were sputtered from pure silicon targets and doped silicon targets with 1 at % B or P. Doping by co-sputtering from composite Si/B4C targets was also explored. The doping concentrations were 3 × 1020 - 2 × 1021 cm-3 for the p-type films and 2.6-2.9 × 1019cm-3 for the n-type films. The conductivity was in the range lO'MO"4 cm-1 for p-doped films and 10-5 Cl cm-1 for the best n-doped films. Band gap estimations were obtained from dielectric function data and showed an increase with hydrogen content. A comparison to device quality PECVD-samples was also made.

Place, publisher, year, edition, pages
1999. Vol. 557, 31-36 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-87064DOI: 10.1557/PROC-557-31OAI: oai:DiVA.org:liu-87064DiVA: diva2:584741
Available from: 2013-01-09 Created: 2013-01-09 Last updated: 2017-12-06
In thesis
1. Photo diodes for machine vision: device characteristics and a-Si:H deposition and analysis
Open this publication in new window or tab >>Photo diodes for machine vision: device characteristics and a-Si:H deposition and analysis
2003 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

During the last years the area of digital cameras based on CMOS technology has grown rapidly. In CMOS, signal processing circuitry and sensor elements can be combined on the same chip, which has resulted in advanced machine vision chip designs. However, the potentially powerful combination of diodes and in-pixel signal processing circuitry, suffers from problems of area utilization trade-offs. By using hydrogenated amorphous silicon (a-Si:H) diodes that are post-processed on the CMOS chip we can achieve a number of advantages. They are better with respect to area utilization and in some sense avoid problems like bulk wafer defects. In addition the evolution of CMOS processes is moving in a direction that degrades the properties of sensor elements.

This thesis explores photo diodes made of a-Si:H with a special focus on fabrication methods and device characteristics for machine vision applications. The work includes characterization of state-of-the-art diodes describing their lag current, photo current rise and fall time, and stability. To further explain themeasured characteristics a device model based on the physical semiconductor material properties has been developed.

This thesis also explores the use of de magnetron sputter deposition as a fabrication method for the a-Si:H p-i-n diodes. The impurity incorporation for the p- and n-doped layers was accomplished using doped targets. This technique is unusual and required a particular research effort. Dielectric functions for the intrinsic as well as n- and p-doped films were extracted and used to predict the optical properties of a p-i-n diode.

The conclusion of this research project is that a-Si:H diodes are suitable for machine vision chips.

Place, publisher, year, edition, pages
Linköping: Linköping studies in science and technology, 2003. 40 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 799
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-34896 (URN)23851 (Local ID)91-7373-602-3 (ISBN)23851 (Archive number)23851 (OAI)
Public defence
2003-03-21, Sal Visionen, Linköpings Universitet, Linköping, 10:15 (Swedish)
Opponent
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-01-09

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Johansson, Å. A.Järrendahl, KennethBirch, JensArwin, Hans

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