Sputter-deposited a-Si:H for p-i-n photodiodes
(English)Manuscript (preprint) (Other academic)
DC magnetron sputter deposition is explored as an alternative for fabricating vertically integrated sensor systems in the form of p-i-n diodes of hydrogenated amorphous silican deposited on CMOS integrated circuit substrates in a post-processing step. We focus here on dopant oncorporation and surface morphological evolution during synthesis of the p-i-n diode sensor structures. The Doping was accomplished using doped targets in a mixed H2/Ar environment. Incorporated P concetrations range from 2.62 to 4.8 x 1019 cm-3 with corresponding conductivities, σ, up to 1.4 x10-5 ohm-1cm-1. B contentrations are between 2.79 and 6.7 X 1020 cm-3 with σ = 4 x 10-5 to 4 x 10-2 ohm-1cm-1. The results of the dopant incorporation are in agreement with reported molecular dynamics simulations. The best intrinsic films have a light to dark conductivity ratio of 102 for white light at an intensity of 10 W/m2. The dark conductivity is a 8 x 10-9 ohm-1cm-1. We conclude that dc magnetron sputter deposition is a good candidate for future device fabrication.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87085OAI: oai:DiVA.org:liu-87085DiVA: diva2:584885