Influence of deep traps on a-Si:h p-i-n-diode response time - visualization by SRH-modelling
(English)Manuscript (preprint) (Other academic)
Simulation of a-Si:H p-i-n diodes is performed using a SRH-model based on deep trapping of both electron and holes in the intrinsic layer. The influence of the band tail states is included as different drift mobilities of electrons and holes. The current levels obtained in the simulations agree with measured levels, at approximately same illumination levels. The simulated results visualise explanations of phenomena observed in measurements, the existence of at least two states with different transient response, an initial peak after illumination turnon and a decreasing current during a light pulse. We conclude that deep trapping effects including both electrons and holes is an important aspect in a-Si:H p-i-n diode modelling.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87089OAI: oai:DiVA.org:liu-87089DiVA: diva2:584957