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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
University of Nebraska, USA .
University of Nebraska, USA .
University of Nebraska, USA .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 19Article in journal (Refereed) Published
Abstract [en]

The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure deposited on SiC substrate is determined using the THz optical Hall effect in the spectral range from 0.22 to 0.32 THz for temperatures from 1.5 to 300 K. The THz optical Hall-effect measurements are combined with room temperature mid-infrared spectroscopic ellipsometry measurements to determine the layer thickness, phonon mode, and free-charge carrier parameters of the heterostructure constituents. An increase of the electron effective mass from (0.22 +/- 0.01)m(0) at 1.5 K to (0.36 +/- 0.03)m(0) at 300 K is observed, which is indicative for a reduction in spatial confinement of the two-dimensional electron gas at room temperature. The temperature-dependence of the mobility and the sheet density is in good agreement with electrical measurements reported in the literature.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2012. Vol. 101, no 19
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-87216DOI: 10.1063/1.4765351ISI: 000311320100032OAI: diva2:587417
Available from: 2013-01-14 Created: 2013-01-14 Last updated: 2013-01-28

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Chen, Jr-TaiForsberg, UrbanJanzén, ErikDarakchieva, Vanya
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and BiologyFaculty of Health Sciences
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