Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates
2013 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 362, 170-173 p.Article in journal (Refereed) Published
This study focuses on the epitaxial growth of silicon carbide (SiC) epitaxial layers, adopting the chloride-based chemical-vapor-deposition (CVD) process, which allows to achieve ten times higher growth rate compared to the standard process based on the mixture of a silicon-containing gas and a hydrocarbon. In order to improve the material quality, substrates with different off-angles were used, since low off-angle substrates result in a reduction of killer defects for specific devices. Different growth mechanisms dominate for different substrate off-cut and an accurate set up of dedicated surface preparation procedures and tuning of growth parameters are needed. This study demonstrates that silicon-rich gas inputs are favorable for lower off-angle (nominally on-axis) substrates, while carbon-rich are beneficial for higher off-angles (usually 8 degrees off-axis for 4H-SiC). Methyltrichlorosilane (MTS) is shown to be the best precursor to achieve the presented results.
Place, publisher, year, edition, pages
Elsevier , 2013. Vol. 362, 170-173 p.
Crystal morphology; Chemical vapor deposition processes; Chloride vapor phase epitaxy; Semiconducting silicon compounds
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87196DOI: 10.1016/j.jcrysgro.2011.09.061ISI: 000311647400038OAI: oai:DiVA.org:liu-87196DiVA: diva2:587470