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Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
National Institute Adv Ind Science and Technology, Japan .
2013 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 362, 170-173 p.Article in journal (Refereed) Published
Abstract [en]

This study focuses on the epitaxial growth of silicon carbide (SiC) epitaxial layers, adopting the chloride-based chemical-vapor-deposition (CVD) process, which allows to achieve ten times higher growth rate compared to the standard process based on the mixture of a silicon-containing gas and a hydrocarbon. In order to improve the material quality, substrates with different off-angles were used, since low off-angle substrates result in a reduction of killer defects for specific devices. Different growth mechanisms dominate for different substrate off-cut and an accurate set up of dedicated surface preparation procedures and tuning of growth parameters are needed. This study demonstrates that silicon-rich gas inputs are favorable for lower off-angle (nominally on-axis) substrates, while carbon-rich are beneficial for higher off-angles (usually 8 degrees off-axis for 4H-SiC). Methyltrichlorosilane (MTS) is shown to be the best precursor to achieve the presented results.

Place, publisher, year, edition, pages
Elsevier , 2013. Vol. 362, 170-173 p.
Keyword [en]
Crystal morphology; Chemical vapor deposition processes; Chloride vapor phase epitaxy; Semiconducting silicon compounds
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-87196DOI: 10.1016/j.jcrysgro.2011.09.061ISI: 000311647400038OAI: oai:DiVA.org:liu-87196DiVA: diva2:587470
Available from: 2013-01-14 Created: 2013-01-14 Last updated: 2017-12-06

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Leone, StefanoHenry, AnneJanzén, Erik

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