Development of FETs and resistive devices based on epitaxially grown single layer graphene on SiC for highly sensitive gas detection
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 687-690 p.Conference paper (Refereed)
Epitaxially grown single layer graphene on silicon carbide (SiC) resistive sensors were characterised for NO2 response at room and elevated temperatures, with an n-p type transition observed with increasing NO2 concentration for all sensors. The concentration of NO2 required to cause this transition varied for different graphene samples and is attributed to varying degrees of substrate induced Fermi-level (E-F) pinning above the Dirac point. The work function of a single layer device increased steadily with increasing NO2 concentration indicating no change in reaction mechanism for high and low concentrations despite a change in sensor response direction. Epitaxially grown graphene device preparation is challenging due to poor adhesion of the graphene layer to the substrate. A field effect transistor (FET) device is presented which does not require wire bonding to contacts on graphene.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 687-690 p.
, Materials Science Forum, ISSN 0255-5476 ; Vols 717 - 720
epitaxial graphene; gra-FET; NO2 sensor; work function
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87577DOI: 10.4028/www.scientific.net/MSF.717-720.687ISI: 000309431000164ISBN: 978-3-03785-419-8OAI: oai:DiVA.org:liu-87577DiVA: diva2:589553
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA