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Development of FETs and resistive devices based on epitaxially grown single layer graphene on SiC for highly sensitive gas detection
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2837-3656
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2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 687-690 p.Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxially grown single layer graphene on silicon carbide (SiC) resistive sensors were characterised for NO2 response at room and elevated temperatures, with an n-p type transition observed with increasing NO2 concentration for all sensors. The concentration of NO2 required to cause this transition varied for different graphene samples and is attributed to varying degrees of substrate induced Fermi-level (E-F) pinning above the Dirac point. The work function of a single layer device increased steadily with increasing NO2 concentration indicating no change in reaction mechanism for high and low concentrations despite a change in sensor response direction. Epitaxially grown graphene device preparation is challenging due to poor adhesion of the graphene layer to the substrate. A field effect transistor (FET) device is presented which does not require wire bonding to contacts on graphene.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 687-690 p.
Series
Materials Science Forum, ISSN 0255-5476 ; Vols 717 - 720
Keyword [en]
epitaxial graphene; gra-FET; NO2 sensor; work function
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-87577DOI: 10.4028/www.scientific.net/MSF.717-720.687ISI: 000309431000164ISBN: 978-3-03785-419-8 (print)OAI: oai:DiVA.org:liu-87577DiVA: diva2:589553
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2013-01-18 Created: 2013-01-18 Last updated: 2016-08-31Bibliographically approved

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Pearce, RuthYakimova, RositsaEriksson, JohanHultman, LarsAndersson, MikeLloyd Spetz, Anita

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Applied PhysicsFaculty of Science & EngineeringSemiconductor MaterialsThe Institute of TechnologySurface and Semiconductor PhysicsThin Film PhysicsSensor Science and Molecular Physics
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