High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 293-296 p.Conference paper (Refereed)
We present a comparison between time-resolved carrier lifetime mappings of several samples and integrated near band edge intensity photoluminescence mappings using a pulsed laser. High-injection conditions and as-grown material are used, which generally allow for the assumption of a single exponential decay. The photoluminescence intensity under these circumstances is proportional to the carrier lifetime and the mappings can be used to detect lifetime-influencing defects in epilayers and give an estimate of the carrier lifetime variation over the wafer. Several examples for the defect detection capability of the system are given.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 293-296 p.
Full wafer mapping; Carrier lifetime; Photoluminescence; Epitaxial defects
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87575DOI: 10.4028/www.scientific.net/MSF.717-720.293ISI: 000309431000068OAI: oai:DiVA.org:liu-87575DiVA: diva2:589557
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA