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Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 289-292 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this report we present homoepitaxial growth of 4H-SiC on the Si-face of nominally on-axis substrates with diameter up to 100 mm in a hot-wall chemical vapor deposition reactor. A comparatively low carrier lifetime has been observed in these layers. Also, local variations in carrier lifetime are different from standard off-cut epilayers. The properties of layers were studied with more focus on charge carrier lifetime and its correlation with starting growth conditions, inhomogeneous surface morphology and different growth mechanisms.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 289-292 p.
Keyword [en]
carrier lifetime; wafer rotation
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-87574DOI: 10.4028/www.scientific.net/MSF.717-720.289ISI: 000309431000067OAI: oai:DiVA.org:liu-87574DiVA: diva2:589558
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2013-01-18 Created: 2013-01-18 Last updated: 2013-02-04

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Bergman, PederBooker, Ian DonLilja, LouiseHassan, JawadJanzén, Erik

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