Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 289-292 p.Conference paper (Refereed)
In this report we present homoepitaxial growth of 4H-SiC on the Si-face of nominally on-axis substrates with diameter up to 100 mm in a hot-wall chemical vapor deposition reactor. A comparatively low carrier lifetime has been observed in these layers. Also, local variations in carrier lifetime are different from standard off-cut epilayers. The properties of layers were studied with more focus on charge carrier lifetime and its correlation with starting growth conditions, inhomogeneous surface morphology and different growth mechanisms.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 289-292 p.
carrier lifetime; wafer rotation
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87574DOI: 10.4028/www.scientific.net/MSF.717-720.289ISI: 000309431000067OAI: oai:DiVA.org:liu-87574DiVA: diva2:589558
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA