Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 285-288 p.Conference paper (Refereed)
We compare two methods for post-growth improvement of bulk carrier lifetime in 4H-SiC: dry oxidations and implantations with either C-12 or N-14, followed by high temperature anneals in Ar atmosphere. Application of these techniques to samples cut from the same wafer/epilayer yields 2- to 11-fold lifetime increases, with the implantation/annealing technive shown to give greater rnaximum lifetimes. The maximum lifetimes reached are similar to 5 mu s after C-12 implantation at 600 degrees C and annealing in Ar for 180 minutes at 1500 degrees C. At higher annealing temperatures the lifetimes decreases, a result which differs from reports in the literature.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 285-288 p.
Carrier lifetime; Implantation; Annealing; Oxidation; Photon counting
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87573DOI: 10.4028/www.scientific.net/MSF.717-720.285ISI: 000309431000066OAI: oai:DiVA.org:liu-87573DiVA: diva2:589560
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA