Investigation of intrinsic carbon-related defects in 4H-SiC by selective-excitation photoluminescence spectroscopy
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 259-262 p.Conference paper (Refereed)
Emission of carbon-related defects is investigated by means of selectively-excited photoluminescence in high purity 4H-SiC electron-irradiated with very low dose. Two new centers with clearly associated phonon replicas are observed, one of which is tentatively assigned to the carbon split interstitial at the hexagonal site. The temperature dependence of the spectrum is also studied and indicates that at least some of the observed luminescence lines arise from recombination of excitons bound to isoelectronic centers.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 259-262 p.
carbon aggregates; carbon split interstitial; di-carbon antisite; photoluminescence
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87572DOI: 10.4028/www.scientific.net/MSF.717-720.259ISI: 000309431000060OAI: oai:DiVA.org:liu-87572DiVA: diva2:589561
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA