liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Investigation of intrinsic carbon-related defects in 4H-SiC by selective-excitation photoluminescence spectroscopy
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Pittsburgh, USA.
University of Pittsburgh, USA.
Show others and affiliations
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 259-262 p.Conference paper, Published paper (Refereed)
Abstract [en]

Emission of carbon-related defects is investigated by means of selectively-excited photoluminescence in high purity 4H-SiC electron-irradiated with very low dose. Two new centers with clearly associated phonon replicas are observed, one of which is tentatively assigned to the carbon split interstitial at the hexagonal site. The temperature dependence of the spectrum is also studied and indicates that at least some of the observed luminescence lines arise from recombination of excitons bound to isoelectronic centers.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 259-262 p.
Keyword [en]
carbon aggregates; carbon split interstitial; di-carbon antisite; photoluminescence
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-87572DOI: 10.4028/www.scientific.net/MSF.717-720.259ISI: 000309431000060OAI: oai:DiVA.org:liu-87572DiVA: diva2:589561
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2013-01-18 Created: 2013-01-18 Last updated: 2014-10-20

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Ivanov, I. G.Gällström, AJanzén, Erik

Search in DiVA

By author/editor
Ivanov, I. G.Gällström, AJanzén, Erik
By organisation
Semiconductor MaterialsThe Institute of Technology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 72 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf