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Identification of Niobium in 4H-SiC by EPR and ab Initio Studies
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Hungarian Academy of Sciences, Budapest, Hungary.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 217-220 p.Conference paper, Published paper (Refereed)
Abstract [en]

In unintentionally Nb-doped 4H-SiC grown by high-temperature chemical vapor deposition (HTCVD), an electron paramagnetic resonance (EPR) center with C-lh symmetry and an electron spin S=1/2 was observed. The spectrum shows a hyperfine structure consisting of ten equal-intensity hyperfine (hf) lines which is identified as due to the hf interaction between the electron spin and the nuclear spin of Nb-93. An additional hf structure due to the interaction with two equivalent Si neighbors was also observed. Ab initio supercell calculations of Nb in 4H-SiC suggest that Nb may form a complex with a C-vacancy (V-C) resulting in an asymmetric split-vacancy (ASV) defect, Nb-Si-V-C. Combining results from EPR and supercell calculations, we assign the observed Nb-related EPR center to the hexagonal-hexagonal configuration of the AVS defect in the neutral charge state, (Nb-Si-V-C)(0).

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 217-220 p.
Keyword [en]
Transition metal impurity; split-vacancy defect; electron paramagnetic resonance; ab initio calculations
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-87571DOI: 10.4028/www.scientific.net/MSF.717-720.217ISI: 000309431000050OAI: oai:DiVA.org:liu-87571DiVA: diva2:589563
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2013-01-18 Created: 2013-01-18 Last updated: 2016-06-02

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Son, Nguyen TienGali, AdamGällström, AndreasLeone, StefanoKordina, OlleJanzén, Erik

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Son, Nguyen TienGali, AdamGällström, AndreasLeone, StefanoKordina, OlleJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and BiologyFaculty of Science & Engineering
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