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Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Norstel AB, Norrköping, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Budapest University of Technology and Economics and Hungarian Academy of Science, Budapest, Hungary .
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2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 211-216 p.Conference paper, Published paper (Refereed)
Abstract [en]

A commonly observed unidentified photoluminescence center in SiC is UD-1. In this report, the UD-1 center is identified to be tungsten related. The identification is based on (i) a W-doping study, the confirmation of W in the samples was made using deep level transient spectroscopy (DLTS), (ii) the optical activation energy of the absorption of UD-1 in weakly n-type samples corresponds to the activation energy of the deep tungsten center observed using DLTS. The tungsten-related optical centers are reported in 4H-, 6H-, and 15R-SiC. Further, a crystal field model for a tungsten atom occupying a Si-site is suggested. This crystal field model is in agreement with the experimental data available: polarization, temperature dependence and magnetic field splitting.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 211-216 p.
Keyword [en]
deep level defect; PL; transition metal; Crystal Field Model
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-87570DOI: 10.4028/www.scientific.net/MSF.717-720.211ISI: 000309431000049ISBN: 978-3-03785-419-8 (print)OAI: oai:DiVA.org:liu-87570DiVA: diva2:589564
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2013-01-18 Created: 2013-01-18 Last updated: 2015-09-22

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Gällström, AndreasMagnusson, BjörnBeyer, FranziskaGali, AdamSon, Nguyen TienLeone, StefanoIvanov, Ivan G.Henry, AnneHemmingsson, CarlJanzén, Erik

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Gällström, AndreasMagnusson, BjörnBeyer, FranziskaGali, AdamSon, Nguyen TienLeone, StefanoIvanov, Ivan G.Henry, AnneHemmingsson, CarlJanzén, Erik
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Semiconductor MaterialsThe Institute of Technology
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