Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 211-216 p.Conference paper (Refereed)
A commonly observed unidentified photoluminescence center in SiC is UD-1. In this report, the UD-1 center is identified to be tungsten related. The identification is based on (i) a W-doping study, the confirmation of W in the samples was made using deep level transient spectroscopy (DLTS), (ii) the optical activation energy of the absorption of UD-1 in weakly n-type samples corresponds to the activation energy of the deep tungsten center observed using DLTS. The tungsten-related optical centers are reported in 4H-, 6H-, and 15R-SiC. Further, a crystal field model for a tungsten atom occupying a Si-site is suggested. This crystal field model is in agreement with the experimental data available: polarization, temperature dependence and magnetic field splitting.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 211-216 p.
deep level defect; PL; transition metal; Crystal Field Model
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87570DOI: 10.4028/www.scientific.net/MSF.717-720.211ISI: 000309431000049ISBN: 978-3-03785-419-8OAI: oai:DiVA.org:liu-87570DiVA: diva2:589564
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA