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CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 189-192 p.Conference paper, Published paper (Refereed)
Abstract [en]

This study has been focused on 3C-SiC epitaxial growth on 4H-SiC (0001) on-axis substrates using the standard CVD chemistry. Several growth parameters were investigated, including growth temperature, in-situ etching process and C/Si ratio. High quality single domain 3C epilayers could be obtained around 1350 degrees C, with propane present during pre-growth etching and when the C/Si ratio was equal to 1. The best grown layer is 100% 3C-SiC and single domain. The net n-type background doping is around 2x10(16) cm(-3). The surface roughness of the layers from AFM analysis is in the 3 to 8 nm range on a 50x50 mu m(2) area.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 189-192 p.
Keyword [en]
heteroepitaxial growth; CVD; 3C-SiC
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-87569DOI: 10.4028/www.scientific.net/MSF.717-720.189ISI: 000309431000045OAI: oai:DiVA.org:liu-87569DiVA: diva2:589565
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2013-01-18 Created: 2013-01-18 Last updated: 2014-10-08

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Li, XunLeone, StefanoAndersson, SvenKordina, OlleHenry, AnneJanzén, Erik

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