CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 189-192 p.Conference paper (Refereed)
This study has been focused on 3C-SiC epitaxial growth on 4H-SiC (0001) on-axis substrates using the standard CVD chemistry. Several growth parameters were investigated, including growth temperature, in-situ etching process and C/Si ratio. High quality single domain 3C epilayers could be obtained around 1350 degrees C, with propane present during pre-growth etching and when the C/Si ratio was equal to 1. The best grown layer is 100% 3C-SiC and single domain. The net n-type background doping is around 2x10(16) cm(-3). The surface roughness of the layers from AFM analysis is in the 3 to 8 nm range on a 50x50 mu m(2) area.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 189-192 p.
heteroepitaxial growth; CVD; 3C-SiC
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87569DOI: 10.4028/www.scientific.net/MSF.717-720.189ISI: 000309431000045OAI: oai:DiVA.org:liu-87569DiVA: diva2:589565
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA