Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 177-180 p.Conference paper (Refereed)
In this work a new approach for the production of freestanding cubic silicon carbide (3C-SiC) in (001) orientation is presented which is based on the combination of chemical vapor deposition (CVD) and the fast sublimation growth process (FSGP). Fast homoepitaxial growth of 3C-SiC using sublimation epitaxy on a template created by CVD growth on silicon substrates allows to obtain thick freestanding material with low defect densities. Using standard silicon wafers as substrate material permits a cost efficient process and the applying of wafers with different orientations. The (001) orientation used in this work will potentially allow further heteroepitaxial growth of other cubic semiconductors, like e.g. gallium nitride (GaN).
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 177-180 p.
cubic silicon carbide; heteroepitaxy; sublimation growth; defect reduction
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87568DOI: 10.4028/www.scientific.net/MSF.717-720.177ISI: 000309431000042OAI: oai:DiVA.org:liu-87568DiVA: diva2:589568
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA