Influence of Growth Mechanism on Carrier Lifetime in on-axis Homoepitaxial Layers of 4H-SiC
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 157-160 p.Conference paper (Refereed)
In this report we present homoepitaxial growth of 4H-SiC on Si-face, nominally on-axis substrates with diameters up to 76 mm in a hot-wall chemical vapor deposition reactor. A comparatively low carrier lifetime has been observed in these layers; local variations in carrier lifetime are different from standard epilayers on off-cut substrates. The properties of the layers were studied with focus on charge carrier lifetime and its correlation with starting growth conditions, inhomogeneities of surface morphology and different growth mechanisms.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 157-160 p.
on-axis; chemical vapor deposition; growth mechanism; carrier lifetime
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87567DOI: 10.4028/www.scientific.net/MSF.717-720.157ISI: 000309431000037OAI: oai:DiVA.org:liu-87567DiVA: diva2:589569
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA