Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 113-116 p.Conference paper (Refereed)
A review of recently achieved results with the chloride-based CVD on 8 degrees and 4 degrees off-axis and nominally on-axis 4H-SiC wafers is done to clarify the epitaxial growth mechanisms on different off-angle substrates. The process conditions selected for each off-axis angle become even more difficult when running at growth rates of 100 mu m/h or more. A fine-tuning of process parameters, mainly temperature, C/Si ratio and in situ surface preparation is necessary for each Wangle. Some trends related to the surface properties and the effective C/Si ratio existing on the surface prior to and during the epitaxial growth can be observed.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 113-116 p.
Chloride-based CVD; homoepitaxial growth; substrate off-angle; high growth rate
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87566DOI: 10.4028/www.scientific.net/MSF.717-720.113ISI: 000309431000026OAI: oai:DiVA.org:liu-87566DiVA: diva2:589571
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA