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Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7171-5383
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 113-116 p.Conference paper, Published paper (Refereed)
Abstract [en]

A review of recently achieved results with the chloride-based CVD on 8 degrees and 4 degrees off-axis and nominally on-axis 4H-SiC wafers is done to clarify the epitaxial growth mechanisms on different off-angle substrates. The process conditions selected for each off-axis angle become even more difficult when running at growth rates of 100 mu m/h or more. A fine-tuning of process parameters, mainly temperature, C/Si ratio and in situ surface preparation is necessary for each Wangle. Some trends related to the surface properties and the effective C/Si ratio existing on the surface prior to and during the epitaxial growth can be observed.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 113-116 p.
Keyword [en]
Chloride-based CVD; homoepitaxial growth; substrate off-angle; high growth rate
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-87566DOI: 10.4028/www.scientific.net/MSF.717-720.113ISI: 000309431000026OAI: oai:DiVA.org:liu-87566DiVA: diva2:589571
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2013-01-18 Created: 2013-01-18 Last updated: 2015-03-11

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Leone, StefanoPedersen, HenrikBeyer, FranziskaAndersson, SvenKordina, OlleHenry, AnneJanzén, Erik

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Leone, StefanoPedersen, HenrikBeyer, FranziskaAndersson, SvenKordina, OlleHenry, AnneJanzén, Erik
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Semiconductor MaterialsThe Institute of Technology
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