Carrot defect control in chloride-based CVD through optimized ramp up conditions
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 109-112 p.Conference paper (Refereed)
Epitaxial growth of 4H-SiC on 8 degrees off-axis substrates has been performed under different condition during the temperature ramp up in order to study the effect on the carrot defect. The study was done in a hot wall chemical vapor deposition reactor using the single molecule precursor methyltrichlorosilane (MTS). During the temperature ramp up, a small flow of HCl or C2H4 was added to the H-2 ambient to study different surface etching conditions. The best result was obtained when HCl was added from 1175 to 1520 degrees C during the ramp up to growth temperature (1575 degrees C).
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 109-112 p.
Carrot defects; Chloride-based CVD; Ramp up condition
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87565DOI: 10.4028/www.scientific.net/MSF.717-720.109ISI: 000309431000025OAI: oai:DiVA.org:liu-87565DiVA: diva2:589572
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA