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Growth and light properties of fluorescent SiC for white LEDs
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Meijo University, Nagoya, Japan.
Meijo University, Nagoya, Japan.
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2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 87-92 p.Conference paper, Published paper (Refereed)
Abstract [en]

The LED technology started to developed many years ago with red light emitting diodes. To achieve the blue LED, novel growth technologies and process steps were explored, and made it possible to demonstrate efficient blue LED performance from nitrides. The efficiency was further developed and blue LEDs were commercially introduced in the 1990s. The white LED became possible by the use of the blue LED and a phosphor that converts a part of the blue light to other colors in the visible range to combine into white light. However, even today there are limitations in the phosphor-based white LED technology, in particular for general lighting, and new solutions should be explored to speed the pace when white LEDs will be able to make substantial energy savings. In this paper we overview gallium nitride materials evolution and growth concepts for LEDs. We describe the fluorescent silicon carbide material prepared by a novel growth technology for a new type of white LED in general lighting with pure white light. This paper introduces an interesting research in fundamental growth and optical properties of light emitting silicon carbide.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 87-92 p.
Keyword [en]
sublimation epitaxy; fluorescent semiconductor; white LED
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-87564DOI: 10.4028/www.scientific.net/MSF.717-720.87ISI: 000309431000020OAI: oai:DiVA.org:liu-87564DiVA: diva2:589574
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2013-01-18 Created: 2013-01-18 Last updated: 2013-02-04

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Syväjärvi, MikaelYakimova, Rositsa

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