Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
2013 (English)Conference paper (Other academic)
Ballistic and diffusive growth regimes in the Fast Sublimation Growth Process of silicon carbide can be determined using suggested theoretical model for the mean free path calculations. The influences of temperature and inert gas pressure on the mass transport for the growth of epitaxial layers were analyzed theoretically and experimentally.
Place, publisher, year, edition, pages
Scientific.Net , 2013. 52-55 p.
, Materials Science Forum, ISSN 0255-5476 ; 740-742
IdentifiersURN: urn:nbn:se:liu:diva-87900DOI: 10.4028/www.scientific.net/MSF.740-742.52ISBN: 978-303785624-6OAI: oai:DiVA.org:liu-87900DiVA: diva2:600842
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia