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Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
University of Erlangen-Nuremberg, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Erlangen-Nuremberg, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2013 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Ballistic and diffusive growth regimes in the Fast Sublimation Growth Process of silicon carbide can be determined using suggested theoretical model for the mean free path calculations. The influences of temperature and inert gas pressure on the mass transport for the growth of epitaxial layers were analyzed theoretically and experimentally.

Place, publisher, year, edition, pages
Scientific.Net , 2013. 52-55 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 740-742
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-87900DOI: 10.4028/www.scientific.net/MSF.740-742.52ISI: 000319785500013OAI: oai:DiVA.org:liu-87900DiVA: diva2:600842
Conference
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia
Available from: 2013-01-27 Created: 2013-01-27 Last updated: 2017-11-07

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Hens, PhilipJokubavicius, ValdasSyväjärvi, Mikael

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