Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
2013 (English)Conference paper (Other academic)
Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.
Place, publisher, year, edition, pages
Scientific.Net , 2013. 39-42 p.
, Materials Science Forum, ISSN 0255-5476 ; 740-742
IdentifiersURN: urn:nbn:se:liu:diva-87901DOI: 10.4028/www.scientific.net/MSF.740-742.39ISBN: 978-303785624-6OAI: oai:DiVA.org:liu-87901DiVA: diva2:600844
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia