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Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
University of Erlangen-Nuremberg, Germany.
University of Erlangen-Nuremberg, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Erlangen-Nuremberg, Germany.
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2013 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.

Place, publisher, year, edition, pages
Scientific.Net , 2013. 39-42 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 740-742
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-87901DOI: 10.4028/www.scientific.net/MSF.740-742.39ISI: 000319785500010OAI: oai:DiVA.org:liu-87901DiVA: diva2:600844
Conference
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia
Available from: 2013-01-27 Created: 2013-01-27 Last updated: 2017-11-07

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Jokubavicius, ValdasSyväjärvi, Mikael

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