Progress in 3C-SiC growth and novel applications
2012 (English)In: Materials Science Forum Vol 711, Trans Tech Publications Inc., 2012, Vol. 711, 3-10 p.Conference paper (Refereed)
Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed with an emphasis on the enhanced understanding of polytype stability in relation to growth conditions, such as supersaturation and Si/C ratio. It is shown that at low temperature/supersaturation spiral 6H-SiC growth is favored, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation is high enough, 3C-SiC nucleates as two-dimensional islands on terraces of the homoepitaxial 6H-SiC. Effect of different substrate surface preparations is considered. Typical extended defects and their electrical activity is discussed. Finally, possible novel applications are outlined.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 711, 3-10 p.
cubic SiC; nucleation control; supersaturation; sublimation growth; defects
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-87982DOI: 10.4028/www.scientific.net/MSF.711.3ISI: 000302673900001OAI: oai:DiVA.org:liu-87982DiVA: diva2:601001
HeteroSiC & WASMPE 2011