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Electrical characterization of chemical sensors based on catalytic metal gate - Silicon carbide Schottky diodes
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Ishinomaki Senshu University, Japan.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Ishinomaki Senshu University, Japan.
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1998 (English)In: Silicon Carbide, III-Nitrides and Related Materials, Part 1-2, Trans Tech Publications , 1998, Vol. 264-2, 1097-1100 p.Conference paper, Published paper (Refereed)
Abstract [en]

The IV-characteristics of platinum gate Schottky diodes with an interfacial layer of TaSix or Ta depends on gas ambient and they are therefore used as gas sensors, e.g. for combustion engine monitoring. Ideality factors and barrier heights depend on interfacial layers and temperature and are further investigated here. Gas sensitive Schottky diodes on both p-and n-type SIC are shown.

Place, publisher, year, edition, pages
Trans Tech Publications , 1998. Vol. 264-2, 1097-1100 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 264-2
Keyword [en]
Schottky diodes; gas sensors; barrier height; ideality factor; interfacial layer
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-88128DOI: 10.4028/www.scientific.net/MSF.264-268.1097ISI: 000072751000262ISBN: 0-87849-790-0 (print)OAI: oai:DiVA.org:liu-88128DiVA: diva2:601794
Conference
7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), 31 August - 5 September 1997, Stockholm, Sweden
Available from: 2013-01-30 Created: 2013-01-30 Last updated: 2014-01-09

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Baranzahi, AmirLundström, IngemarLloyd Spetz, Anita

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