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Studies of the ambient dependent inversion capacitance of catalytic metal oxide silicon carbide devices based on 6H- and 4H-SiC material
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
IMC, Kista, Sweden .
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1998 (English)In: Silicon Carbide, III-Nitrides and Related Materials, Part 1-2, Trans Tech Publications , 1998, Vol. 264-2, 1089-1092 p.Conference paper, Published paper (Refereed)
Abstract [en]

Platinum-oxide-silicon carbide structures change their capacitance upon gas exposure and are used as gas sensors. The decrease of the inversion capacitance within 750 to 900 degrees C due to hydrogen exposure is studied for 4H- and 6H-SiC,:both n- and p-type. A mechanism for the capacitance decrease is suggested which explains also the large change in the conductance of the structures.

Place, publisher, year, edition, pages
Trans Tech Publications , 1998. Vol. 264-2, 1089-1092 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 264-2
Keyword [en]
MIS-devices; electric admittance; high temperature; gas sensors; minority carriers
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-88127ISI: 000072751000260ISBN: 0-87849-790-0 (print)OAI: oai:DiVA.org:liu-88127DiVA: diva2:601795
Conference
International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), 31 August - 5 September 1997, Stockholm, Sweden
Available from: 2013-01-30 Created: 2013-01-30 Last updated: 2014-01-09

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Baranzahi, AmirLundström, IngemarKarlsson, SusanneLloyd Spetz, Anita

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