Studies of the ambient dependent inversion capacitance of catalytic metal oxide silicon carbide devices based on 6H- and 4H-SiC material
1998 (English)In: Silicon Carbide, III-Nitrides and Related Materials, Part 1-2, Trans Tech Publications , 1998, Vol. 264-2, 1089-1092 p.Conference paper (Refereed)
Platinum-oxide-silicon carbide structures change their capacitance upon gas exposure and are used as gas sensors. The decrease of the inversion capacitance within 750 to 900 degrees C due to hydrogen exposure is studied for 4H- and 6H-SiC,:both n- and p-type. A mechanism for the capacitance decrease is suggested which explains also the large change in the conductance of the structures.
Place, publisher, year, edition, pages
Trans Tech Publications , 1998. Vol. 264-2, 1089-1092 p.
, Materials Science Forum, ISSN 0255-5476 ; 264-2
MIS-devices; electric admittance; high temperature; gas sensors; minority carriers
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-88127ISI: 000072751000260ISBN: 0-87849-790-0OAI: oai:DiVA.org:liu-88127DiVA: diva2:601795
International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), 31 August - 5 September 1997, Stockholm, Sweden