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Modified palladium metal‐oxide‐semiconductor structures with increased ammonia gas sensitivity
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2817-3574
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
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1983 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 43, no 9, 839-841 p.Article in journal (Refereed) Published
Abstract [en]

It is known that palladium metal‐oxide‐semiconductor (Pd‐MOS) structures are sensitive detectors for hydrogen gas. We show that the evaporation of a thin film of catalytically active metals on top of the structure can increase the sensitivity towards ammonia considerably. It was found that the thin metal must be in contact with the oxide to cause the increased sensitivity. The largest increase was observed with the transition metals Ir and Pt. The ammonia sensitivity could be enhanced about 60 times compared to that of an unmodified structure

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 1983. Vol. 43, no 9, 839-841 p.
Keyword [en]
mos junctions, palladium, ammonia, gases, detectors, sensitivity, silicon, detection, modifications
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-88169DOI: 10.1063/1.94514ISI: A1983RN85100014OAI: oai:DiVA.org:liu-88169DiVA: diva2:601821
Available from: 2013-01-30 Created: 2013-01-30 Last updated: 2017-12-06

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Winquist, FredrikSpetz, AnitaNylander, ClaesLundström, Ingemar

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