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Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structures
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2817-3574
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
1986 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 7, no 6, 353-355 p.Article in journal (Refereed) Published
Abstract [en]

Hydrogen-sensitive palladium-gate MOS structures heated above 150°C show sensitivity to ethanol vapor. The effect is probably due to catalytic dehydrogenation of adsorbed ethanol molecules on the surface of the palladium gate.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE) , 1986. Vol. 7, no 6, 353-355 p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-88165DOI: 10.1109/EDL.1986.26398ISI: A1986C629100006OAI: oai:DiVA.org:liu-88165DiVA: diva2:601827
Available from: 2013-01-30 Created: 2013-01-30 Last updated: 2017-12-06

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Spetz, AnitaLundström, Ingemar

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