The fabrication of amorphous SiO2 substrates suitable for transmission electron microscopy studies of ultrathin polycrystalline films
1986 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 145, no 1, 99-104 p.Article in journal (Refereed) Published
A method to produce SiO2 transmission electron microscopy substrates by means of silicon micromachining is described. The substrate consists of an SiO2 window 50–200 nm thick suspended in a silicon frame. It was developed to enable the study of ultrathin porous gate metals grown on the same substrate as in the device studied. The thin film to be studied can be vapour phase deposited directly onto the substrate and then without any further manipulations inserted into the transmission electron microscope.
Place, publisher, year, edition, pages
Elsevier, 1986. Vol. 145, no 1, 99-104 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-88163DOI: 10.1016/0040-6090(86)90256-7ISI: A1986F219800011OAI: oai:DiVA.org:liu-88163DiVA: diva2:601829