Gas sensors based on catalytic metal-gate field-effect devices
1986 (English)In: Sensors and Actuators, ISSN 0250-6874, Vol. 10, no 3-4, 399-421 p.Article, review/survey (Refereed) Published
The properties of gas-sensitive semiconductor devices with catalytic metal gates are reviewed, with emphasis on field-effect structures sensitive to hydrogen-containing molecules like H2, NH3, H2S, alcohols, ethylene etc.
A brief review of some of the developed device structures are given. The principles of hydrogen sensors with Pd gates are described in some detail. Ammonia-sensitive field-effect devices with thin catalytic metal gates are discussed. Applications of gas-sensitive field-effect devices for studies of catalytic reactions together with electron spectroscopy in UHV systems, for medical diagnosis, in leak detectors and as biosensors are reviewed.
Place, publisher, year, edition, pages
Elsevier, 1986. Vol. 10, no 3-4, 399-421 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-88164DOI: 10.1016/0250-6874(86)80056-7ISI: A1986G496500013OAI: oai:DiVA.org:liu-88164DiVA: diva2:601832