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Optimization of ammonia-sensitive metal-oxide-semiconductor structures with platinum gates
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2817-3574
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
1987 (English)In: Sensors and Actuators, ISSN 0250-6874, Vol. 11, no 4, 349-365 p.Article in journal (Refereed) Published
Abstract [en]

Ammonia gas-sensitive MOS capacitors with platinum as a thin active metal gate have been studied. The influence of parameters such as the thickness and area of the platinum film on the ammonia sensitivity was investigated. Thicknesses of about 10 to 30 nm of platinum were found to be favourable for a large response to small ammonia concentrations. It was further observed that with aluminium as a thick contact material, the response to ammonia was independent of the area of the platinum film. Theoretical and experimental C(V curves were compared to elucidate the mechanism behnd the ammonia sensitivity. it is concluded that the sensitivity arises from the thin catalytic Pt film.

Place, publisher, year, edition, pages
Elsevier, 1987. Vol. 11, no 4, 349-365 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-88162DOI: 10.1016/0250-6874(87)80075-6ISI: A1987H540600007OAI: oai:DiVA.org:liu-88162DiVA: diva2:601834
Available from: 2013-01-30 Created: 2013-01-30 Last updated: 2014-01-09

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Spetz, AnitaLundström, Ingemar

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