liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Reversible interaction of hydrogen with thin layers of thermally grown silicon dioxide
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2817-3574
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
1988 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 63, no 11, 5507-5513 p.Article in journal (Refereed) Published
Abstract [en]

Some effects of hydrogen on the electrical properties of Pd‐metal‐thin (≊10 nm) oxide‐silicon capacitors are reported. High‐frequency (1 MHz) and quasistatic capacitance voltage curves are measured at 100 °C as a function of hydrogen partial pressure in a background atmosphere of 20% O2/Ar. Besides the standard hydrogen‐induced shift of the capacitance‐voltage characteristics we find: (1) an increase in the accumulation capacitance with increasing hydrogen partial pressure, and (2) a nonmonotonic increase in the quasistatic capacitance minimum with increasing hydrogen pressure. The relative increase in the accumulation capacitance is shown to be related to the square of the hydrogen‐induced voltage shift (and hence to the square of the concentration of hydrogen atoms at the Pd‐SiO2 interface). We discuss our findings, based on existing hydrogen‐silicon dioxide models, to interpret the effects of hydrogen on the high‐frequency and quasistatic capacitance characteristics.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 1988. Vol. 63, no 11, 5507-5513 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-88160DOI: 10.1063/1.340326ISI: A1988N822900047OAI: oai:DiVA.org:liu-88160DiVA: diva2:601836
Available from: 2013-01-30 Created: 2013-01-30 Last updated: 2017-12-06

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Spetz, AnitaLundström, Ingemar

Search in DiVA

By author/editor
Spetz, AnitaLundström, Ingemar
By organisation
Applied PhysicsThe Institute of Technology
In the same journal
Journal of Applied Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 159 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf