Reversible interaction of hydrogen with thin layers of thermally grown silicon dioxide
1988 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 63, no 11, 5507-5513 p.Article in journal (Refereed) Published
Some effects of hydrogen on the electrical properties of Pd‐metal‐thin (≊10 nm) oxide‐silicon capacitors are reported. High‐frequency (1 MHz) and quasistatic capacitance voltage curves are measured at 100 °C as a function of hydrogen partial pressure in a background atmosphere of 20% O2/Ar. Besides the standard hydrogen‐induced shift of the capacitance‐voltage characteristics we find: (1) an increase in the accumulation capacitance with increasing hydrogen partial pressure, and (2) a nonmonotonic increase in the quasistatic capacitance minimum with increasing hydrogen pressure. The relative increase in the accumulation capacitance is shown to be related to the square of the hydrogen‐induced voltage shift (and hence to the square of the concentration of hydrogen atoms at the Pd‐SiO2 interface). We discuss our findings, based on existing hydrogen‐silicon dioxide models, to interpret the effects of hydrogen on the high‐frequency and quasistatic capacitance characteristics.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 1988. Vol. 63, no 11, 5507-5513 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-88160DOI: 10.1063/1.340326ISI: A1988N822900047OAI: oai:DiVA.org:liu-88160DiVA: diva2:601836