Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
2013 (English)Conference paper (Refereed)
Carrier lifetime and formation of defects have been investigated as a function of growth temperature in n-type 4H-SiC epitaxial layers, grown by horizontal hot-wall CVD. Emphasis has been put on having fixed conditions except for the growth temperature, hence growth rate, doping and epilayer thickness were constant in all epilayers independent of growth temperature. An increasing growth temperature gave higher Z1/2 concentrations along with decreasing carrier lifetime. A correlation between growth temperature and D1 defect was also observed.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. Vol. 740-742, 637-640 p.
Atomic Force Microscopy, Carrier Lifetime, DLTS, Epitaxial Growth, Horizontal Hot-Wall CVD, Intrinsic Defect, Photoluminescence (PL)
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-88341DOI: 10.4028/www.scientific.net/MSF.740-742.637ISI: 000319785500151OAI: oai:DiVA.org:liu-88341DiVA: diva2:602795
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), 2-6 September 2012, St Petersburg, Russia