Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices
1993 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, Vol. 15, no 1-3, 19-23 p.Article in journal (Refereed) Published
Catalytic metal gate-silicon dioxide-silicon carbide (MOSiC) capacitors operating to about 800-degrees-C are used as high temperature gas sensor devices. Hydrogen or hydrogen containing molecules, which are dissociated on the catalytic metal surface, create a decrease of the flat band voltage of the MOS capacitor. The MOSiC devices with a platinum gate respond to saturated hydrocarbons in air at concentrations well below the explosion limits.
Place, publisher, year, edition, pages
Elsevier, 1993. Vol. 15, no 1-3, 19-23 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-88151DOI: 10.1016/0925-4005(93)85022-3ISI: A1993LZ07500004OAI: oai:DiVA.org:liu-88151DiVA: diva2:602828