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Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2817-3574
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
1993 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 15, no 1-3, 19-23 p.Article in journal (Refereed) Published
Abstract [en]

Catalytic metal gate-silicon dioxide-silicon carbide (MOSiC) capacitors operating to about 800-degrees-C are used as high temperature gas sensor devices. Hydrogen or hydrogen containing molecules, which are dissociated on the catalytic metal surface, create a decrease of the flat band voltage of the MOS capacitor. The MOSiC devices with a platinum gate respond to saturated hydrocarbons in air at concentrations well below the explosion limits.

Place, publisher, year, edition, pages
Elsevier, 1993. Vol. 15, no 1-3, 19-23 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-88151DOI: 10.1016/0925-4005(93)85022-3ISI: A1993LZ07500004OAI: oai:DiVA.org:liu-88151DiVA: diva2:602828
Available from: 2013-02-04 Created: 2013-01-30 Last updated: 2017-12-06

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Spetz, AnitaLundström, Ingemar

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