X-ray photoemission and Auger electron spectroscopy analysis of fast responding activated metal oxide silicon carbide gas sensors
1997 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 299, no 1-2, 183-189 p.Article in journal (Refereed) Published
Platinum-silicon dioxide-silicon carbide, MOSiC, sensors are possible to operate at high temperatures and show a gas sensitivity pattern which is of interest for many applications including exhaust gases from car engines. The introduction of a buffer layer of tantalum silicide between the metal and the silicon dioxide resulted, after an annealing step, in a very good adhesion of the gate contact and fast responding sensors with improved signal stability. Depth profiling using X-ray photoemission and Auger electron spectroscopy showed that the annealing step converts the tantalum silicide to a mixed phase predominantly containing tantalum pentoxide. Tantalum silicide as well as platinum silicide are also present in the metal-oxide interface region.
Place, publisher, year, edition, pages
Elsevier, 1997. Vol. 299, no 1-2, 183-189 p.
metal-oxide semiconductor structure; sensors; X-ray photoelectron spectroscopy; Auger electron spectroscopy; silicon carbide
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-88140DOI: 10.1016/S0040-6090(96)09407-2ISI: A1997XH32500033OAI: oai:DiVA.org:liu-88140DiVA: diva2:602852