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X-ray photoemission and Auger electron spectroscopy analysis of fast responding activated metal oxide silicon carbide gas sensors
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2817-3574
Technische Universitaet Cottbus, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
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1997 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 299, no 1-2, 183-189 p.Article in journal (Refereed) Published
Abstract [en]

Platinum-silicon dioxide-silicon carbide, MOSiC, sensors are possible to operate at high temperatures and show a gas sensitivity pattern which is of interest for many applications including exhaust gases from car engines. The introduction of a buffer layer of tantalum silicide between the metal and the silicon dioxide resulted, after an annealing step, in a very good adhesion of the gate contact and fast responding sensors with improved signal stability. Depth profiling using X-ray photoemission and Auger electron spectroscopy showed that the annealing step converts the tantalum silicide to a mixed phase predominantly containing tantalum pentoxide. Tantalum silicide as well as platinum silicide are also present in the metal-oxide interface region.

Place, publisher, year, edition, pages
Elsevier, 1997. Vol. 299, no 1-2, 183-189 p.
Keyword [en]
metal-oxide semiconductor structure; sensors; X-ray photoelectron spectroscopy; Auger electron spectroscopy; silicon carbide
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-88140DOI: 10.1016/S0040-6090(96)09407-2ISI: A1997XH32500033OAI: oai:DiVA.org:liu-88140DiVA: diva2:602852
Available from: 2013-02-04 Created: 2013-01-30 Last updated: 2017-12-06

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Lloyd Spetz, AnitaBaranzahi, AmirLundström, Ingemar

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