Fast chemical sensing with metal-insulator silicon carbide structures
1997 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 18, no 6, 287-289 p.Article in journal (Refereed) Published
It is demonstrated that the current-voltage characteristics of platinum-thin insulator silicon carbide diodes react rapidly to changes of the concentration of oxygen and hydrocarbons in the ambient already at temperatures around 500 degrees C-600 degrees C, In this letter, we use moving gas outlets to, for the first time, estimate time constants of the response in the order of a few milliseconds. The short time constants of these sensors make them suitable for applications in combustion monitoring. The new method to modulate gas concentrations rapidly at surfaces has the potential to be a valuable tool for evaluation of device structures for fast chemical sensing.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE) , 1997. Vol. 18, no 6, 287-289 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-88139DOI: 10.1109/55.585361ISI: A1997XA74300016OAI: oai:DiVA.org:liu-88139DiVA: diva2:602856